A Broadband GaN pHEMT Power Amplifier Using Non-Foster Matching
Non-Foster matching is applied to style a multi- octave broadband GaN power amplifier (PA) in this paper. The bandwidth limitation from high-Q interstage matching is overcome through the use of negative capacitor, which is realized with a negative impedance converter (NIC) using the cross-coupled GaN FETs. For top power operation over the entire bandwidth, the natural interstage matching is optimized for the higher subfrequency band and therefore the lower subfrequency band is compensated for by the negative capacitance presented by non-Foster circuit (NFC). Detailed analysis is presented to understand the frequency and power limits of NIC circuits for PA applications. Two negative impedance matched PAs (NMPAs) are fabricated with 0.25-$mu$m GaN pHEMT method. The implemented PA with $2times$ combining shows the output powers of 35.seven–thirty seven.five dBm with the ability added efficiencies of 13–twenty one% from half-dozen to 18 GHz. The $4times$ combining PA achieves over five W output power from 7 to 17 GHz. The NFC boosts the efficiencies and power below twelve GHz to achieve broadband performance without using any lossy matching or negative feedback. To our information, this is the first demonstration of NIC-based mostly broadband amplifiers with multi-watt-level output power.
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