Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz
We have a tendency to gift an initial study of the RF reliability of SiN x/InAlN/AlN/GaN MIS-HEMTs with a molecular-beam epitaxy deposited SiN x gate insulator thickness varying from 0 (Schottky gate) to 6 nm. T-gate devices with a hundred and twenty nm gate length were stressed below continuous-wave forty-GHz large-signal RF operation, biased in class AB with $V_DS = mbox20 mboxV$. Degradation in massive-signal output power gain was observed to numerous degrees for all devices. For structures with a three- or half dozen-nm gate insulator thickness, output power degraded by approximately 1 dB or less when 250 h of operation. A speedy decrease in output power was observed for structures with a one-nm gate insulator or a Schottky gate, with a one-dB decrease in output power among the primary 10 h of operation. Degradation in output power was associated with a reduction in drain current, seemingly caused by hot-electron-related trapping as the drain current was absolutely recoverable after exposing the devices to UV light. Simulations show that because the gate insulator thickness is reduced, the peak lateral electric field in the channel will increase, that would be per a rise in hot-electron-connected degradation.
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