Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit
Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have a tendency to have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. During this paper, the present collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated very well for many voltages with 2 switching frequencies. We have a tendency to also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage supply. We have a tendency to construct and test prototype circuits for a lift-kind dc–dc converter and a single-part full-bridge inverter with a gate drive circuit. The issues to be solved for the normally on GaN HEMT, which features a (static) voltage rating of over 60zero V, are clarified on the idea of the experimental results.
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