Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials ABSTRACT:Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 – 450 C range, phase separation was suppressed throughout the miscibility gap, as evidenced in measurements such as photoluminescence, high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. Bright photoluminescence was recorded in the sample series ranging from 1.7 to 4.9 ums. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface