Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy ABSTRACT:Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1-xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1-xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1-xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1-xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1-xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Structural and luminescent properties of bulk InAsSb Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials