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ABSTRACT:

The strong bandgap bowing in the InAsxSb1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1-x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAsxSb1-x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 μm.


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