Reducing Switching Latency and Energy in STT-MRAM Caches With Field-Assisted Writing - 2015 PROJECT TITLE: Reducing Switching Latency and Energy in STT-MRAM Caches With Field-Assisted Writing - 2015 ABSTRACT: A field-assisted spin-torque transfer magnetoresistive RAM (STT-MRAM) cache is presented for the use in high-performance energy-efficient microprocessors. Adding field assistance reduces the switching latency by a factor of 4. An array model is developed to evaluate the switching energy for different field currents and array sizes. Several STT-MRAM-based cells demonstrate a 55% energy reduction as compared with an SRAM cache subsystem. As compared with STT-MRAM caches with subbank buffering and differential writes, a field-assisted STT-MRAM cache improves the system performance by 28%, with a 6.7% increase in energy. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits - 2015 An Optimized Modified Booth Recoder for Efficient Design of the Add-Multiply Operator